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SEMICONDUCTOR
TECHNICAL DATA
HIGH-DEFINITION CRT DISPLAY, VIDEO OUTPUT APPLICATIONS.
C
KTC3503
TRIPLE DIFFUSED NPN TRANSISTOR
A B E F G D
FEATURES
High breakdown voltage : VCEO 300V. Small reverse transfer capacitance and excellent high frequency characteristic. : Cre=1.8pF (VCB=30V, f=1MHz) Complementary KTA1381.
H J K
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse Ta=25 Tc=25
)
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING 300 300 5 100 200 1.5 7 150 -55 150 UNIT V V V mA
N
M O 1 2 3
P
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C D E F G H J K L M N O P
MILLIMETERS 8.3 MAX 5.8 0.7 _ 3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.50 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX
TO-126
W
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Collector Output Capacitance Reverse Transfer Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Base-Emitter Breakdown Voltage Note : hFE Classification O:60 120, Y:100
)
TEST CONDITION VCB=200V, IE=0 VEB=4V, IC=0 VCE=10V, IC=10mA VCE=30V, IC=10mA VCB=30V, IE=0, f=1MHz VCB=30V, IE=0, f=1MHz IC=20mA, IB=2mA IC=20mA, IB=2mA IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 MIN. 60 300 300 5 TYP. 150 2.6 1.8 MAX. 0.1 0.1 200 0.6 1.0 MHz pF pF V V V V V UNIT A A ICBO IEBO
SYMBOL
hFE (Note) fT Cob Cre VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO 200
2003. 7. 24
Revision No : 3
1/3
KTC3503
I C - V CE
COLLECTOR CURRENT I C (mA) 20 16 12 8 4 0 COLLECTOR CURRENT I C (mA)
I B =120A I B =100A I B=80A I B =60A I B =40A I B =20A I B =0
I C - V CE
10 8 6 4 2 0
IB=60A IB=50A IB=40A IB=30A IB=20A IB=10A IB=0
0
2
4
6
8
10
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
I C - V BE
120 COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE 100 80
C C Ta=75 Ta=25 Ta=-2
h FE - I C
500 300
VCE =10V Ta=75 C Ta=25 C
VCE =10V
60 40 20 0 0 0.2 0.4
5C
100 50 30
Ta=-25 C
0.6
0.8
1.0
10 0.5
1
3
10
30
100
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT I C (mA)
fT - I C
TRANSITION FREQUENCY f T (MHz) OUTPUT CAPACITANCE Cob (pF) 500 300
VCE =30V
C Ob - VCB
50 30
f T =1MHz
100 50 30
10 5 3
10 0.5
1
3
10
30
100
1
0.5
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
COLLECTOR BASE VOLTAGE V CB (V)
2003. 7. 24
Revision No : 3
2/3
KTC3503
C re - VCB
REVERSE TRANSFER CAPACITANCE C re (pF) 30
f T =1MHz
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION 1 VOLTAGE VCE(sat) (V) 0.5 0.3
I C /I B =10
50
10 5 3
0.1 0.05 0.03 0.5 1 3 10 30 100 200
1 0.5
1
3
10
30
100
COLLECTOR BASE VOLTAGE V CB (V)
COLLECTOR CURRENT I C (mA)
VBE(sat) - I C
10 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) 5 3
IC /I B =10
SAFE OPERATING AREA
300 COLLECTOR CURRENT I C (mA)
I C MAX.(PULSED)*
1m
50
10
100 50 30
I C MAX.(CONTINUOUS)
DC
0 S*
1 0.5 0.3 0.5 1 3 10 30 100 200 COLLECTOR CURRENT I C (mA)
OP Ta ER =2 AT 5 C I ON
D Tc C O =2 PE 5 RA CT
0m
S*
IO
S*
N
10 5 3 3
* SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
10
30
100
300
COLLECTOR EMITTER VOLTAGE VCE (V)
COLLECTOR POWER DISSIPATION PC (W)
Pc - Ta
8
(1) (1) Tc=Ta INFINITE HEAT SINK (2) NO HEAT SINK
6
4
2
(2)
0
0
50
100
150
200
AMBIENT TEMPERATURE Ta ( C)
2003. 7. 24
Revision No : 3
3/3

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